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ST 1702
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications The transistor is subdivided into five groups, L, M, N, O and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 C)
O
TO-92 Plastic Package Weight approx. 0.19g
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb = 25 C
O
Symbol VCBO VCEO VEBO IC Ptot Tj TS Symbol L M N O P hFE hFE hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT COB Min. 132 170 213 263 333 30 25 5 -
Value 30 25 5 1 600 150 - 55 to + 150 Typ. 100 12 Max. 189 233 300 370 476 0.1 0.5 0.7 -
Unit V V V A mW
O
C C Unit V V V A A V MHz pF
O
Parameter DC Current Gain at VCE = 1 V, IC = 100 mA Current Gain Group
Collector Base Breakdown Voltage at IC = 10 A Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 100 A Collector Cutoff Current at VCB = 20 V Emitter Cutoff Current at VEB = 5 V Collector Saturation Voltage at IC = 500 mA, IB = 50 mA Gain Bandwidth Product at VCE = 5 V, IC = 10 mA Output Capacitance at VCB = 5 V, f = 1 MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 27/06/2006

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